BS616LV2019
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +125OC)
WRITE CYCLE
CYCLE TIME : 70ns
(VCC=2.4~3.6V)
JEDEC
PARAMETER
NAME
PARANETER
DESCRIPTION
UNITS
NAME
MIN.
TYP.
MAX.
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX1
tWHAX2
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
Write Cycle Time
70
0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Set up Time
tAW
tCW
tBW
tWP
tWR1
tWR2
tWHZ
tDW
tDH
Address Valid to End of Write
Chip Select to End of Write
Data Byte Control to End of Write
70
70
30
35
0
--
--
(LB, UB)
--
Write Pulse Width
--
Write Recovery Time
(CE, WE)
(CE2)
--
Write Recovery Time
0
--
Write to Output High Z
--
30
--
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
30
0
--
tOHZ
tOW
--
30
--
5
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
CE
(5,12)
CE2
(11)
tCW
(3)
tWR2
tBW
LB, UB
tAW
(2)
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
Revision 1.2A
Mar. 2006
R0201-BS616LV2019A
7
BSI [ BRILLIANCE SEMICONDUCTOR ]
