BS616LV2019
n ABSOLUTE MAXIMUM RATINGS (1)
n OPERATING RANGE
AMBIENT
TEMPERATURE
-40OC to + 125OC
SYMBOL
VTERM
TBIAS
PARAMETER
RATING
-0.5(2) to 5.0
-40 to +125
-60 to +150
1.0
UNITS
V
RANG
VCC
Terminal Voltage with
Respect to GND
Automotive
2.4V ~ 3.6V
Temperature Under
Bias
OC
n CAPACITANCE (1) (TA = 25OC, f = 1.0MHz)
TSTG
Storage Temperature
Power Dissipation
DC Output Current
OC
PT
W
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
IOUT
20
mA
Input
CIN
CIO
VIN = 0V
VI/O = 0V
6
8
pF
pF
Capacitance
Input/Output
Capacitance
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
1. This parameter is guaranteed and not 100% tested.
2. –2.0V in case of AC pulse width less than 30 ns.
n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +125OC)
PARAMETER
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
NAME
Power Supply
2.4
--
3.6
V
VCC
Input Low Voltage
-0.5(2)
2.2
--
--
--
0.8
V
V
VIL
VIH
Input High Voltage
VCC+0.3(3)
VIN = 0V to VCC
CE= VIH or CE2(5) = VIL
VI/O = 0V to VCC
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
--
1
1
uA
uA
V
IIL
,
--
--
ILO
CE= VIH or CE2(5) = VIL or OE = VIH
VCC = Max, IOL = 2.0mA
--
--
0.4
--
VOL
VOH
ICC
VCC = Min, IOH = -1.0mA
CE = VIL and CE2(5) = VIH,
2.4
--
--
V
Operating Power Supply
Current
VCC=3.0V
VCC=3.0V
VCC=3.0V
VCC=3.0V
--
16
2
mA
mA
mA
uA
(4)
IIO = 0mA, f = FMAX
CE = VIL and CE2(5) = VIH,
Operating Power Supply
Current
--
--
ICC1
ICCSB
ICCSB1
IIO = 0mA, f = 1MHz
CE = VIH or CE2(5) = VIL,
IIO = 0mA
CE≧VCC-0.2V or CE2(5)≦0.2V,
Standby Current – TTL
--
--
0.5
20
Standby Current – CMOS
--
0.3
VIN≧VCC-0.2V or VIN≦0.2V
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. 48B BGA ignore CE2 condition.
Revision 1.2A
Mar. 2006
R0201-BS616LV2019A
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
