BH62UV1601
AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
CYCLE TIME : 55ns CYCLE TIME : 70ns
PARANETER
PARAMETER
NAME
DESCRIPTION
Write Cycle Time
(VCC = 3.0V)
(VCC = 1.8V)
UNITS
NAME
MIN. TYP. MAX.
MIN. TYP. MAX.
tAVAX
tAVWL
tAVWH
tE1LWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
55
--
--
--
--
--
--
--
--
--
--
--
--
--
70
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAS
Chip Select to End of Write
Address Set up Time
0
--
0
--
tAW
40
40
30
0
--
50
50
35
0
--
tCW
Address Valid to End of Write
Write Pulse Width
--
--
tWP
--
--
tWR1
tWR2
tWHZ
tDW
Write Recovery Time
(CE1, WE)
(CE2)
--
--
Write Recovery Time
0
--
0
--
Write to Output High Z
--
25
--
--
30
--
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
25
0
30
0
tDH
--
--
tOHZ
tOW
--
25
--
--
30
--
5
5
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
(5)
CE1
CE2
(11)
(2)
tCW
(3)
tWR2
tAW
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
Revision
Oct.,
1.2
R0201-BH62UV1601
6
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
