BSI
BH62UV8000
n AC ELECTRICAL CHARACTERISTICS (TA = -25OC to +85OC)
WRITE CYCLE
JEDEC
PARAMETER
NAME
CYCLE TIME : 70ns
PARANETER
DESCRIPTION
UNITS
NAME
MIN.
70
0
TYP.
--
MAX.
--
tAVAX
tAVWL
tAVWH
tELWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
Write Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Set up Time
--
--
tAW
Address Valid to End of Write
Chip Select to End of Write
50
50
35
0
--
--
tCW
tWP
--
--
Write Pulse Width
--
--
Write Recovery Time
(CE1, WE)
(CE2)
tWR1
tWR2
tWHZ
tDW
tDH
--
--
Write Recovery Time
0
--
--
Write to Output High Z
--
--
20
--
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
30
0
--
--
--
tOHZ
tOW
--
--
25
--
5
--
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
(5)
CE1
CE2
(11)
(2)
tCW
(3)
tWR2
tAW
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
R0201-BH62UV8000
Revision 1.0
6
Jul.
2005
BSI [ BRILLIANCE SEMICONDUCTOR ]
