BSI
BH62UV8000
n DC ELECTRICAL CHARACTERISTICS (TA = -25OC to +85OC)
PARAMETER
PARAMETER
TEST CONDITIONS
MIN.
1.65
TYP.(1)
MAX.
UNITS
V
NAME
VCC
Power Supply
--
--
--
--
--
--
--
3.6
0.4
0.8
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
Input Low Voltage
-0.3(2)
V
VIL
VIH
1.4
2.0
Input High Voltage
VCC+0.3(3)
V
VIN = 0V to VCC
,
IIL
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
--
--
--
1
1
uA
uA
V
CE1 = VIH or CE2 = VIL
VI/O = 0V to VCC,
ILO
CE1 = VIH or CE2 = VIL or OE = VIH
VCC = Max, IOL = 0.1mA
VCC = Max, IOL = 2.0mA
VCC = Min, IOH = -0.1mA
VCC = Min, IOH = -1.0mA
0.2
0.4
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VCC=1.8V
VCC=3.6V
VOL
VOH
ICC
VCC-0.2
2.4
--
V
Operating Power Supply CE1 = VIL, CE2 = VIH,
4.5
5.0
1.0
1.5
7
--
--
--
--
mA
mA
mA
uA
(4)
Current
IDQ = 0mA, f = FMAX
10
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
IDQ = 0mA, f = 1MHz
1.5
2.0
0.5
1.0
12
ICC1
ICCSB
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
Standby Current – TTL
--
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
2.5
2.5
(5)
ICCSB1
Standby Current – CMOS
15
1. Typical characteristics are at TA=25OC.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICCSB1(MAX.) is 10uA/13uA at VCC=1.8V/3.6V and TA=0OC ~ 70OC.
n DATA RETENTION CHARACTERISTICS (TA = -25OC to +85OC)
SYMBOL
VDR
PARAMETER
VCC for Data Retention
Data Retention Current
TEST CONDITIONS
MIN.
1.0
--
TYP. (1)
MAX.
UNITS
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
--
--
V
0.5
2.5
3.0
12
VCC=1.0V
VCC=2.0V
(3)
ICCDR
uA
Chip Deselect to Data
Retention Time
tCDR
0
--
--
--
--
ns
ns
See Retention Waveform
(2)
tR
1. TA=25OC.
Operation Recovery Time
tRC
2. tRC = Read Cycle Time.
3. ICCDR(MAX.) is 2.5uA /10uA at VCC=1.0V/2.0V and TA=0OC ~ 70OC.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
V
DR≧1.0V
VCC
VCC
VCC
tCDR
tR
CE1≧VCC - 0.2V
VIH
VIH
CE1
R0201-BH62UV8000
Revision 1.0
Jul. 2005
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
