ADS7863
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SBAS383–JUNE 2007
ELECTRICAL CHARACTERISTICS (continued)
At TA = –40°C to +125°C, and AVDD = 5V, BVDD = 3.3V, VREF = 2.5V (internal), fCLK = 24MHz, and fSAMPLE = 1.5MSPS, unless
otherwise noted.
ADS7863
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX
UNIT
INTERNAL VOLTAGE REFERENCE, continued
PSRR
IREFOUT
IREFSC
tREFON
Power-supply rejection ratio
dB
mA
mA
μs
Reference output dc current
Reference output short-circuit current
Reference output settling time
1
100
VOLTAGE REFERENCE INPUT
VREF Reference input voltage range
IREF
0.5
2.5
50
10
2.525
V
Reference input current
μA
pF
CREF
Reference input capacitance
DIGITAL INPUTS
Logic family
CMOS
VIH
VIL
IIN
High-level input voltage
0.7 × BVDD
–0.3
BVDD + 0.3
0.3 × BVDD
+50
V
V
Low-level input voltage
Input current
VIN = BVDD to BGND
–50
nA
pF
CIN
Input capacitance
5
DIGITAL OUTPUTS
Logic family
CMOS
VOH
VOL
High-level output voltage
IOH = –100μA
IOH = 100μA
BVDD – 0.2
–50
V
Low-level output voltage
High-impedance-state output current
Output capacitance
0.2
V
IOZ
VIN = BVDD to BGND
+50
nA
pF
pF
COUT
CLOAD
5
Load capacitance
30
POWER SUPPLY
AVDD
BVDD
Analog supply voltage
AVDD to AGND
BVDD to BGND
2.7
5.0
3.3
6
5.5
5.5
7
V
V
Buffer I/O supply voltage
1.65
AVDD = 3V
AVDD = 5.5V
7
8
AVDD = 3V, NAP power-down
AVDD = 5.5V, NAP power-down
AVDD = 3V, deep power-down
AVDD = 5.5V, deep power-down
AIDD
Analog supply current
μA
BIDD
Buffer I/O supply current
Power dissipation
μA
AVDD = 3V
18.9
40
PDISS
μW
AVDD = 5.5V
5
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