AO4706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
20A
VDS=24V
10A
5A
VDS=12V
IS=1A
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
15
2.5
2
60
50
40
30
18
15
12
9
125ºC
125ºC
di/dt=1000A/us
di/dt=1000A/us
12
9
25ºC
1.5
1
trr
25ºC
125ºC
Qrr
6
25ºC
20
10
0
6
Irm
S
25ºC
3
0.5
0
3
125ºC
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Is (A)
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
50
15
12
9
27
2.5
2
125ºC
45
40
35
30
25
20
15
10
5
24
21
18
15
12
9
Is=20A
125ºC
Is=20A
25ºC
25ºC
1.5
1
125º
Qrr
6
trr
25ºC
25ºC
S
3
6
0.5
0
125ºC
Irm
3
0
0
0
0
200
400
600
800
1000 1200
0
200
400
600
800
1000
1200
di/dt (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
