AO4706
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.02
10
0.1
20
IDSS
Zero Gate Voltage Drain Current
mA
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
0.1
2.4
µA
V
VGS(th)
ID(ON)
1.5
1.85
100
A
V
GS=10V, ID=16.5A
5.6
8.4
6.8
10.5
8.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS=4.5V, ID=15A
6.8
mΩ
S
VDS=5V, ID=16.5A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
112
0.37
0.5
5
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4000
520
217
0.6
5000
0.9
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
59
27
12
11
9
77
35
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=17A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=0.9Ω,
9
ns
RGEN=3Ω
tD(off)
tf
37
8
ns
ns
trr
IF=16.5A, dI/dt=300A/µs
IF=16.5A, dI/dt=300A/µs
17
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
