AS7C256
AS7C256L
3, 9
READ CYCLE
(V = 5V±10%, GND = 0V, T = 0°C to +70°C)
CC a
-10
-12
-15
-20
-25
-35
Parameter
Symbol Min Max Min Max Min Max Min Max Min Max Min Max Unit Notes
Read Cycle Time
t
t
t
t
t
t
t
t
t
t
t
10
–
–
–
2
3
–
0
–
0
–
–
10
10
3
12
–
–
–
3
3
–
0
–
0
–
–
12
12
3
15
–
–
–
3
3
–
0
–
0
–
–
15
15
4
20
–
–
–
3
3
–
0
–
0
–
–
20
20
5
25
–
–
–
3
3
–
0
–
0
–
–
25
25
6
35
–
–
–
3
3
–
0
–
0
–
–
35
35
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address Access Time
3
3
AA
Chip Enable (CE) Access Time
Output Enable (OE) Access Time
Output Hold from Address Change
CE LOW to Output in Low Z
CE HIGH to Output in High Z
OE LOW to Output in Low Z
OE HIGH to Output in High Z
Power Up Time
ACE
OE
–
–
–
–
–
–
5
OH
–
–
–
–
–
–
4, 5
4, 5
4, 5
4, 5
4, 5
4, 5
CLZ
CHZ
OLZ
OHZ
PU
3
3
4
5
6
8
–
–
–
–
–
–
3
3
4
5
6
8
–
–
–
–
–
–
Power Down Time
10
12
15
20
25
35
PD
3, 6, 7, 9
TIMING WAVEFORM OF READ CYCLE 1
(Address Controlled)
t
RC
Address
t
t
OH
AA
D
Data Valid
out
3, 6, 8, 9
TIMING WAVEFORM OF READ CYCLE 2
(CE Controlled)
1
t
RC
CE
OE
t
OE
t
t
OHZ
OLZ
t
CHZ
t
ACE
D
out
Data Valid
t
CLZ
t
PD
I
I
CC
t
PU
Supply
Current
SB
50%
50%
AS7C256-04
4
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
