5SNA 0600G650100
3000
2500
2000
1500
1000
500
2500
2000
1500
1000
500
1200
1000
800
VCC = 3600 V
RG = 3.9 ohm
Tvj = 125 °C
Ls = 280 nH
Erec
Qrr
Qrr
600
Erec
Irr
400
Irr
VCC = 3600 V
IF = 600 A
200
0
Tvj = 125 °C
Ls = 280 nH
Erec [mJ] = -1.2 x 10-3 x IF2 + 3.43 x IF + 530
0
0
0
300
600
IF [A]
900
1200
0
1
2
3
4
di/dt [kA/µs]
Fig. 12 Typical reverse recovery characteristics
Fig. 13 Typical reverse recovery characteristics
vs forward current
vs di/dt
1200
1000
1400
VCC £ 4400 V
di/dt 4000 A/µs
£
1200
1000
800
600
400
200
0
Tvj = 125 °C
Ls 280 nH
£
25 °C
800
600
400
200
0
125 °C
0
1
2
3
4
5
0
1000 2000 3000 4000 5000 6000 7000
VR [V]
VF [V]
Fig. 14 Typical diode forward characteristics,
Fig. 15 Safe operating area diode (SOA)
chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06
page 8 of 9
ABB [ THE ABB GROUP ]
