5SNA 0600G650100
5)
Diode characteristic values
Parameter
Symbol Conditions
min typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
3.2
3.4
3.8
4.0
6)
Forward voltage
VF
Irr
IF = 600 A
V
A
790
Reverse recovery current
Recovered charge
990
VCC = 3600 V,
IF = 600 A,
VGE = ±15 V,
RG = 3.9 W
Ls = 280 nH
inductive load
700
Qrr
trr
µC
ns
mJ
1200
1700
2200
1100
2200
Reverse recovery time
Reverse recovery energy
Erec
5)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
6)
7)
Package properties
Parameter
Symbol Conditions
min typ max Unit
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.011 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.021 K/W
2)
Thermal resistance case
to heatsink
Rth(c-s)
per module, l grease = 1W/m x K
0.006
K/W
V
Partial discharge extinction
voltage
Ve
5100
f = 50 Hz, QPD £ 10pC (acc. to IEC 61287)
Comparative tracking index
CTI
³ 600
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
7)
Mechanical properties
Parameter
Symbol Conditions
min typ max Unit
L x W x H
190 x 140 x 48
Dimensions
Typical , see outline drawing
mm
Term. to base: 40
according to IEC 60664-1
and EN 50124-1
Clearance distance in air
Surface creepage distance
da
mm
Term. to term: 26
Term. to base: 64
Term. to term: 56
according to IEC 60664-1
and EN 50124-1
ds
m
mm
g
Mass
1760
7)
Package and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06
page 3 of 9
ABB [ THE ABB GROUP ]
