5SNA 0600G650100
1000
100
10
20
15
10
5
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
VCC = 3600 V
Cies
Coes
Cres
IC = 600 A
Tvj = 25 °C
0
1
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
VCE [V]
Qg [µC]
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10 Typical gate charge characteristics
2.5
2
VCC £ 4400 V, Tvj = 125 °C, VGE = ±15 V
RGoff = 3.9 ohm, Ls 280 nH
£
1.5
1
0.5
0
Chip
Module
0
1000 2000 3000 4000 5000 6000 7000
VCE [V]
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1558-02 Jan 06
page 7 of 9
ABB [ THE ABB GROUP ]
