5SGF 40L4502
Fig. 12 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage. Extracted gate
charge vs. turn-off current.
Fig. 13 Turn-off energy per pulse vs. turn-off current
and snubber capacitance.
Fig. 14 Required snubber capacitor vs. max
Fig. 15 Turn-off energy per pulse, storage time and
peak turn-off gate current vs. junction
temperature.
allowable turn-off current.
IGQM [A]
I
GQM [A]
ts [s]
ts [s]
50
1200
1100
1000
900
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
Preliminary Data
45
40
35
30
25
20
15
10
5
IGQM
Preliminary Data
IGQM
tS
Conditions:
ITGQ = 4000 A
Tj = 125 °C
tS
800
Conditions:
µ
diGQ/dt =40 A/ s
Tj = 125 °C
0
700
0
10
20
30
40
50
60
0
500
1000 1500 2000 2500 3000 3500 4000
ITGQ [A]
µ
diGQ/dt [A/ s]
Fig. 16 Storage time and peak turn-off gate current
Fig. 17 Storage time and peak turn-off gate current
vs. neg. gate current rise rate.
vs. turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1209-04 Jan. 03
page 7 of 9
ABB [ THE ABB GROUP ]
