5SGF 40L4502
Gate
Maximum rated values 1)
Parameter
Symbol Conditions
VGRM
min
min
typ
max
17
Unit
V
Repetetive peak reverse
voltage
Repetetive peak reverse
current
IGRM
20
mA
VGR = VGRM
Characteristic values
Parameter
Symbol Conditions
typ
1.2
4
max
Unit
V
A
Gate trigger voltage
Gate trigger current
VGT
IGT
Tvj = 25°C,
VD = 24 V, RA = 0.1 Ω
Thermal
Maximum rated values 1)
Parameter
Junction operating temperature
Storage temperature range
Characteristic values
Parameter
Symbol Conditions
min
-40
-40
typ
typ
max
125
125
Unit
°C
°C
Tvj
Tstg
Symbol Conditions
min
max
11
20
25
6
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Thermal resistance junction to case
Rth(jc) Double side cooled
Rth(jc)A Anode side cooled
Rth(jc)C Cathode side cooled
Rth(ch) Single side cooled
Rth(ch) Double side cooled
Thermal resistance case to heatsink
(Double side cooled)
3
Analytical function for transient thermal
impedance:
n
(t) = åR
Z
thJC
i
(1-e-t/τ i )
i=1
i
1
2
3
4
Ri(K/kW)
7.766
0.5764
1.728
0.1258
1.064
0.0128 0.0031
0.450
τi(s)
Fig. 1 Transient thermal impedance, junction to
case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1209-04 Jan. 03
page 3 of 9
ABB [ THE ABB GROUP ]
