5SGF 40L4502
GTO Data
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
ITAVM Half sine wave, TC = 85 °C
min
typ
max
1180
Unit
A
Max. average on-state
current
Max. RMS on-state current ITRMS
1850
A
A
Max. peak non-repetitive
ITSM
tp = 10 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
25×103
surge current
Limiting load integral
I2t
3.1×106 A2s
40×103
Max. peak non-repetitive
ITSM
tp = 1 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
A
surge current
Limiting load integral
Characteristic values
Parameter
I2t
800×103 A2s
Symbol Conditions
min
min
typ
max
3.8
1.2
0.65
100
Unit
V
V
mΩ
A
On-state voltage
Threshold voltage
Slope resistance
Holding current
VT
V(T0)
rT
IT = 4000 A, Tvj = 125°C
Tvj = 125°C
IT = 400...5000 A
IH
Tvj = 25°C
Turn-on switching
Maximum rated values 1)
Parameter
Symbol Conditions
diT/dtcr
typ
typ
max
500
Unit
A/µs
Critical rate of rise of on-
f = 200 Hz
f = 1 Hz
Tvj = 125°C,
state current
IT = 4000 A, IGM = 50 A,
Critical rate of rise of on-
state current
Min. on-time
Characteristic values
Parameter
diT/dtcr
ton
1000
A/µs
µs
diG/dt = 40 A/µs
100
Symbol Conditions
min
max
2.5
5
Unit
µs
µs
J
Turn-on delay time
td
VD = 0.5 VDRM, Tvj = 125 °C
IT = 4000 A, di/dt = 300 A/µs,
Rise time
tr
IGM = 50 A, diG/dt = 40 A/µs, CS = 6
Turn-on energy per pulse
Eon
3
µF, RS = 5 Ω
Turn-off switching
Maximum rated values 1)
Parameter
Symbol Conditions
ITGQM
min
typ
typ
max
4000
Unit
A
Max. controllable turn-off
V
DM ≤ VDRM, diGQ/dt = 40 A/µs,
current
CS = 6 µF, LS ≤ 0.2 µH
Min. off-time
Characteristic values
Parameter
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
toff
Symbol Conditions
100
µs
min
max
25
3
10
1100
Unit
µs
µs
J
tS
tf
Eoff
IGQM
VD = 0.5 VDRM, Tvj = 125 °C
DM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM
RS = 5Ω, CS = 6 µF, LS = 0.2 µH
V
,
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1209-04 Jan. 03
page 2 of 9
ABB [ THE ABB GROUP ]
