Philips Semiconductors
Product specification
NPN general purpose transistor
BC817
FEATURES
PINNING
PIN
• High current (max. 500 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
base
emitter
collector
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BC807.
handbook, halfpage
3
3
2
MARKING
1
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
1
2
BC817
6D
6A
BC817-25
BC817-40
6B
6C
Top view
MAM255
BC817-16
Note
Fig.1 Simplified outline (SOT23) and symbol.
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
open base; IC = 10 mA
open collector
45
5
500
1
mA
A
ICM
IBM
200
250
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tamb ≤ 25 °C; note 1
−65
−
junction temperature
operating ambient temperature
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Jun 01
2
ETC [ ETC ]
