GD150HFL120C2S
IGBT Module
Symbol
Description
GD150HFL120C2S
Units
V
VGES
Gate-Emitter Voltage
±20
300
Collector Current @ TC=25℃,Tj=150℃
@ TC=80℃,Tj=150℃
A
IC
A
150
ICM(1)
Pulsed Collector Current tp=1ms
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum power Dissipation @ Tj=150℃
Short Circuit Withstand Time @ Tj=125℃
Operating Junction Temperature
Storage Temperature Range
300
A
IF
150
A
IFM
300
A
PD
1422
W
TSC
10
μs
Tj
-40 to +150
-40 to +125
4800
℃
℃
A2s
V
TSTG
I2t-value, Diode
VR=0V,t=10ms,Tj=125℃
VISO
Isolation Voltage RMS,f=50Hz,t=1min
Power Terminal Screw:M6
2500
2.5 to 5
3 to 6
N.m
N.m
Mounting Torque
Mounting Screw:M6
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Electrical Characteristics of IGBT TC=25℃unless otherwise noted
Off Characteristics
Symbol
Parameter
Collector-Emitter
Breakdown Voltage
Test Conditions
Min. Typ. Max. Units
V(BR)CES
Tj=25℃
1200
V
VCE=VCES,VGE=0V,
Tj=25℃
ICES
IGES
Collector Cut-Off Current
5.0
mA
nA
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25℃
400
On Characteristics
Symbol
VGE(th)
Parameter
Test Conditions
IC=6mA,VCE=VGE,
Tj=25℃
Min. Typ. Max. Units
Gate-Emitter Threshold
Voltage
5.0
6.2
1.9
2.1
7.0
V
IC=150A,VGE=15V,
Tj=25℃
Collector to Emitter
Saturation Voltage
VCE(sat)
V
IC=150A,VGE=15V,
Tj=125℃
Switching Characteristics
Symbol
td(on)
tr
Parameter
Turn-On Delay Time
Rise Time
Test Conditions
Min. Typ. Max. Units
190
60
ns
ns
ns
VCC=600V,IC=150A,
RG=6.8Ω,VGE=±15V,
Tj=25℃
td(off)
Turn-Off Delay Time
460
©2011 STARPOWER Semiconductor Ltd.
2/11/2011
2/8
Rev.C
ETC [ ETC ]
