Philips Semiconductors
Product specification
Schottky barrier diode
BAS85
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
FEATURES
DESCRIPTION
• Low forward voltage
• High breakdown voltage
• Guard ring protected
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
immersion soldering.
• Hermetically-sealed small SMD
package.
k
a
APPLICATIONS
handbook, halfpage
• Ultra high-speed switching
• Voltage clamping
MAM190
• Protection circuits
• Blocking diodes.
Cathode indicated by a grey band.
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
average forward current
CONDITIONS
MIN.
MAX.
30
UNIT
VR
V
−
−
−
IF
200
200
mA
mA
IF(AV)
VRWM = 25 V; a = 1.57; δ = 0.5;
note 1; Fig.2
IFRM
IFSM
Tstg
Tj
repetitive peak forward current
non-repetitive peak forward current
storage temperature
tp ≤ 1 s; δ ≤ 0.5
300
5
mA
A
−
−
tp = 10 ms
+150
125
+125
°C
°C
°C
−65
−
junction temperature
Tamb
operating ambient temperature
−65
Note
1. Refer to SOD80 standard mounting conditions.
1996 Oct 01
2
ETC [ ETC ]
