FDP7030BLS/FDB7030BLS
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 1 mA
Min
30
Typ
Max Units
V
Off Characteristics
I
D
= 10 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
22
500
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 1 mA
1
2.3
–4.4
8.6
13.2
12.4
3
V
mV/°C
I
D
= 1 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 28 A
V
GS
= 4.5 V,
I
D
= 23 A
V
GS
=10 V, I
D
= 28A, T
J
= 100°C
V
GS
= 10 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 28 A
50
10.5
16.5
16.5
mΩ
I
D(on)
g
FS
A
47
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1708
474
134
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d
(
off
)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
11
8
30
16
21
16
48
29
21
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 28 A
15
7
5
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
See “SyncFET Schottky body diode characteristics” below.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 11.5A,
d
iF
/d
t
= 300 A/µs
(Note 1)
(Note 1)
3.5
0.44
0.60
20
20
0.7
A
V
ns
nC
(Note 2)
FDP7030BLS Rev B(W)
ETC [ ETC ]
