FDP7030BLS/FDB7030BLS
May 2001
FDP7030BLS / FDB7030BLS
30V N-Channel PowerTrench
®
SyncFET
™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge.
The FDP7030BLS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP7030BLS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP7030BL in parallel with a
Schottky diode.
Features
•
56 A, 30 V.
R
DS(ON)
= 10.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 16.5 mΩ @ V
GS
= 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (15nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
and fast switching
•
High power and current handling capability
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1)
(Note 1)
Units
V
V
A
W
W/°C
°C
°C
56
160
65
0.43
–65 to +100
275
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.3
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB7030BLS
FDP7030BLS
Device
FDB7030BLS
FDP7030BLS
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2001
Fairchild Semiconductor Corporation
FDP7030BLS Rev B(W)
ETC [ ETC ]
