Philips Semiconductors
Product specification
NPN switching transistor
MMBT3904
handbook, halfpage
10
3
MGU825
VCEsat
(mV)
(1)
(2)
(3)
10
2
10
10
−1
1
10
10
2
I C (mA)
10
3
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
=
−1.9
V; V
CC
= 3 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.7 Test circuit for switching times.
2002 Oct 04
5