Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
•
Collector current capability I
C
= 200 mA
•
Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
•
General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: MMBT3906.
MARKING
TYPE NUMBER
MMBT3904
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
Top view
MMBT3904
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
40
200
UNIT
V
mA
MARKING CODE
(1)
7A∗
handbook, halfpage
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
40
6
200
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2002 Oct 04
2
ETC [ ETC ]
