IRF830
Electrical Characteristics (
T
C
=
Symbol
V
(BR)DSS
V
(BR)DSS
/
∆
T
J
I
D(ON)
R
DS(ON)
V
GS(TH)
g
fs
I
DSS
25°C unless otherwise specified)
°
Parameter
Drain-to-source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
On-State Drain Current
(note 2)
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage
Current
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”)
Charge
Turn-On Delay Time
Rise Time
Turn -Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C,
I
D
= 1mA
V
GS
>
I
D(ON)
x R
DS(ON)
Max
V
GS
=10V, I
D
= 2.7A
(note 4)
V
DS
= V
GS,
I
D
= 250µA
V
DS
= 50V, I
D
= 2.7A
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V,
T
C
= 125°C
V
GS
= 20V
Min
500
-
Typ
Max
Units
V
0.61
-
4.5
1.5
V/°C
°
A
Ω
V
S
µ
A
2.0
2.5
-
-
-
-
4.0
-
25
250
100
I
GSS
Q
g
Q
qs
Q
gd
t
d ( on)
T
r
t
d (off)
T
f
L
D
L
S
C
iss
C
oss
C
rss
-
V
G
= -20V
I
D
=3.1A
V
DS
= 400V
V
GS
= 10V (note 4)
V
DD
= 250V
I
D
= 3.1.1A
R
G
= 12Ω
R
D
= 79Ω (note 4)
Between lead 6mm (0.25in.)
from package and center or die
contact
V
GS
= 0V
V
DS
= 25V
F = 1.0MHZ
-
-
-
-
-
-
-
-
-
-
-
-
-100
-
-
38
5.0
22
8.2
16
42
16
4.5
7.5
610
160
68
-
-
-
-
-
-
-
-
-
nA
nC
ns
nH
pF
Source-Drain Rating Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) (Note 1)
Diode Forward Voltage (note 4)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Conditions
MOSFET symbol showing the
integral reverse p-n junction
diode.
Min Typ
-
-
-
-
Max Units
4.5
A
18
-
-
1.6
V
T
J
=25
°
C
,
I
S
=2.5A,V
GS
=DV
°
-
320
640
ns
T
J
=25 C, I
F
=2.1A
-
1.0
2.0
di/dt=100A/µs (Note 4)
µ
C
Intrinsic turn-on time is negligible (turn-on is dominated by (L
S
+L
D
)
Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature.
2. V
DD
= 50V, starting Tj = 25°C, L = 24 mH R
G
= 25Ω, I
AS
= 4.5A
3. I
SD
≤
4.5A, di/dt
≤
75A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
150°C
4. Pulse with
≤
300µs; duty cycle
≤
2%
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
ETC [ ETC ]
