欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRF830 参数 Datasheet PDF下载

IRF830图片预览
型号: IRF830
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [POWER MOSFET]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 43 K
品牌: ETC [ ETC ]
 浏览型号IRF830的Datasheet PDF文件第2页浏览型号IRF830的Datasheet PDF文件第3页  
Bay Linear
Linear Excellence
POWER MOSFET
IRF830
Advance Information
Description
The Bay Linear MOSFET’s provide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
V
DSS
= 500V
R
DS (ON)
= 1.5
I
D
= 4.5A
Ordering Information
Device
IRL830T
IRL830S
Package
TO-220
TO-263 ( D
2
)
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Parameter
I
D
@ T
C
=25°C
°
I
D
@ T
C
=100°C
°
I
DM
P
D
@ T
C
=25°C
°
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current (1)
Power Dissipation
Linear Derating Factor
Linear Derating Factor ( PCB Mount, D
2
) (1)
Gate-to- Source Voltage
Single Pulse Avalanche Energy (2)
Avalanche Current (1)
Repetitive Avalanche Energy (1)
Peak Diode Recovery dv/dt (3)
Junction & Storage Temperature Range
Soldering Temperature, for 10 seconds
Max
4.5
2.9
18
74
0.59
0.025
±20
280
4.5
7.4
3.5
−55
to +150
300 (1.6mm from case)
Unit
A
W
W/°C
°
V
mJ
A
mJ
V/ns
°
C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
, T
STG
Thermal Resistance
Parameter
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to Case
Case-to-Sink, Flat, Greased Surface ( TO-220)
Junction-to Ambient ( PCB Mount, D
2
)
Junction-to Ambient
Min
-
-
-
Typ
-
0.50
-
Max
1.7
40
62
Units
°
C/W
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com