Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BC807
BC807-16
BC807-25
BC807-40
h
FE
V
CEsat
V
BE
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
DC current gain
base-emitter voltage
collector capacitance
transition frequency
I
C
=
−500
mA; V
CE
=
−1
V; note 1
I
C
=
−500
mA; V
CE
=
−1
V;
notes 1 and 2
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
collector-emitter saturation voltage I
C
=
−500
mA; I
B
=
−50
mA; note 1
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−100
mA; V
CE
=
−1
V; note 1
see Figs 2, 3 and 4
MIN.
−
−
−
100
100
160
250
40
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
9
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
BC807
UNIT
K/W
MAX. UNIT
−100
−5
−100
600
250
400
600
−
−700
−1.2
−
−
mV
V
pF
MHz
nA
µA
nA
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 80
1999 Apr 08
3
ETC [ ETC ]
