Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC817.
1
BC807
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
MARKING
2
TYPE NUMBER
BC807
BC807-16
BC807-25
BC807-40
Note
MARKING CODE
5D∗
5A∗
5B∗
5C∗
(1)
Top view
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base; I
C
=
−10
mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−50
−45
−5
−500
−1
−200
250
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 Apr 08
2
ETC [ ETC ]
