BUZ 100SL
Typ. output characteristics
I
D
=
f
(V
DS
)
parameter:
t
p
= 80 µs
BUZ100SL
Typ. drain-source-on-resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
BUZ100SL
170
A
P
tot
= 170W
l k
ji h
0.060
Ω
g
VGS
[V]
a
2.5
b
c
d
e
f
140
0.050
0.045
f
b
3.0
d
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
R
DS(on)
120
c
3.5
I
D
0.040
0.035
0.030
0.025
0.020
g
100
e
e
f
g
80
60
c
h
d
i
j
k
40
l
0.015
b
a
20
0.010
V
GS
[V] =
h
i j
k
l
b
3.0
c
3.5
d
4.0
e
f
4.5 5.0
g
5.5
h
i
6.0 6.5
j
7.0
k
l
8.0 10.0
0.005
V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
V
DS
0.000
0
20
40
60
80
100
120
A
150
I
D
Typ. transfer characteristics
I
D
=
f
(V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥
2 x
I
D
x
R
DS(on)max
70
Typ. forward transconductance
g
fs
= f(I
D
);
T
j
= 25˚C
parameter:
g
fs
60
S
A
50
45
50
40
g
fs
V
I
D
40
35
30
30
25
20
20
15
10
10
5
0
1.0
1.5
2.0
2.5
3.0
4.0
0
0
10
20
30
40
50
A
65
V
GS
I
D
Data Sheet
6
05.99
ETC [ ETC ]
