SIPMOS® Power Transistor
Features
•
N channel
•
BUZ 100SL
V
DS
I
D
55
70
V
A
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Enhancement mode
R
DS(on)
0.012
Ω
•
Avalanche rated
•
Logic Level
•
dv/dt rated
•
175˚C operating temperature
Type
BUZ100SL
BUZ100SL E3045A
BUZ100SL E3045
Package
Ordering Code
Packaging
Pin 1
G
Pin 2 Pin 3
D
S
P-TO220-3-1 Q67040-S4000-A2 Tube
P-TO263-3-2 Q67040-S4000-A6 Tape and Reel
P-TO263-3-2 Q67040-S4000-A5 Tube
Maximum Ratings,
at
Tj
= 25 ˚C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Value
70
50
280
380
17
6
kV/µs
mJ
Unit
A
I
D
T
C
= 25 ˚C
T
C
= 100 ˚C
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 ˚C
Avalanche energy, single pulse
I
D
= 70 A,
V
DD
= 25 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 70 A,
V
DS
= 40 V, di/dt = 200 A/µs,
T
jmax
= 175 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
170
-55... +175
55/175/56
V
W
˚C
T
C
= 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
ETC [ ETC ]
