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SI3014-KS 参数 Datasheet PDF下载

SI3014-KS图片预览
型号: SI3014-KS
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3 V FCC / JATE直接访问安排 [3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT]
分类和应用:
文件页数/大小: 54 页 / 1369 K
品牌: ETC [ ETC ]
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Si3035  
Table 3. DC Characteristics, V = +5 V  
D
(VA = +5 V ±5%, VD = +5 V ±5%, TA = 0 to 70°C for K-Grade)  
Parameter  
Symbol  
VIH  
Test Condition  
Min  
3.5  
Typ  
Max  
Unit  
V
High Level Input Voltage  
Low Level Input Voltage  
High Level Output Voltage  
Low Level Output Voltage  
Input Leakage Current  
0.8  
VIL  
V
VOH  
VOL  
IL  
IO = –2 mA  
IO = 2 mA  
3.5  
V
0.4  
10  
1
V
–10  
µA  
mA  
mA  
mA  
mA  
Power Supply Current, Analog  
Power Supply Current, Digital1  
Total Supply Current, Sleep Mode1  
Total Supply Current, Deep Sleep1,2  
Notes:  
IA  
VA pin  
0.3  
14  
ID  
VD pin  
18  
2.5  
0.5  
IA + ID  
IA + ID  
PDN = 1, PDL = 0  
PDN = 1, PDL = 1  
1.3  
0.04  
1. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded  
(Static IOUT = 0 mA).  
2. RGDT is not functional in this state.  
Table 4. DC Characteristics, V = +3.3 V  
D
(VA = Charge Pump, VD = +3.3 V ± 0.3 V, TA = 0 to 70°C for K-Grade)  
Parameter  
Symbol  
VIH  
Test Condition  
Min  
2.0  
Typ  
Max  
Unit  
V
High Level Input Voltage  
Low Level Input Voltage  
High Level Output Voltage  
Low Level Output Voltage  
Input Leakage Current  
VIL  
0.8  
V
VOH  
VOL  
IL  
IO = –2 mA  
IO = 2 mA  
2.4  
V
0.35  
10  
V
–10  
µA  
mA  
mA  
mA  
Power Supply Current, Analog1,2  
Power Supply Current, Digital3  
Total Supply Current, Sleep Mode3  
Total Supply Current, Deep Sleep3,4  
Power Supply Voltage, Analog1,5  
Notes:  
IA  
VA pin  
0.3  
9
1
ID  
VD pin  
12  
IA + ID  
IA + ID  
VA  
PDN = 1, PDL = 0  
PDN = 1, PDL = 1  
Charge Pump On  
1.2  
0.04  
4.6  
2.5  
0.5  
5.00  
4.3  
V
1. Only a decoupling capacitor should be connected to VA when the charge pump is on.  
2. There is no IA current consumption when the internal charge pump is enabled and only a decoupling cap is connected  
to the VA pin.  
3. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded  
(Static IOUT = 0 mA).  
4. RGDT is not functional in this state.  
5. The charge pump is recommended to be used only when VD < 4.5 V. When the charge pump is not used, VA should be  
applied to the device before VD is applied on power up if driven from separate supplies.  
Rev. 1.2  
5
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