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AS4LC1M16E5-60TC 参数 Datasheet PDF下载

AS4LC1M16E5-60TC图片预览
型号: AS4LC1M16E5-60TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M X 6 CMOS DRAM ( EDO ) [3V 1M X 6 CMOS DRAM (EDO)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 590 K
品牌: ETC [ ETC ]
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AS4LC1M16E5
®
AC parameters common to all waveforms
-50
Symbol
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CP
t
RAL
t
ASC
t
CAH
Parameter
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS hold time
RAS to CAS hold time
CAS to RAS precharge time
Row address setup time
Row address hold time
Transition time (rise and fall)
Refresh period
CAS precharge time
Column address to RAS lead time
Column address setup time
Column address hold time
Min
80
30
50
8
15
9
10
40
5
0
8
1
8
25
0
8
Max
10K
10K
35
25
50
16
Min
100
40
60
10
15
10
10
50
5
0
10
1
10
30
0
10
-60
Max
10K
10K
43
30
50
16
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
7,8
6
9
10
Notes
Shaded areas indicate advance information.
Read cycle
-50
Symbol
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
Parameter
Access time from RAS
Access time from CAS
Access time from address
Read command setup time
Read command hold time to CAS
Read command hold time to RAS
Min
0
0
0
Max
50
12
25
Min
0
0
0
-60
Max
60
15
30
Unit
ns
ns
ns
ns
ns
ns
12
12
Notes
9
9,16
10,16
Shaded areas indicate advance information.
4/11/01
Alliance Semiconductor
5