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AS4LC1M16E5-60TC 参数 Datasheet PDF下载

AS4LC1M16E5-60TC图片预览
型号: AS4LC1M16E5-60TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M X 6 CMOS DRAM ( EDO ) [3V 1M X 6 CMOS DRAM (EDO)]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 590 K
品牌: ETC [ ETC ]
 浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第1页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第2页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第4页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第5页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第6页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第7页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第8页浏览型号AS4LC1M16E5-60TC的Datasheet PDF文件第9页  
AS4LC1M16E5  
®
Absolute maximum ratings  
Parameter  
Symbol  
VDQ  
Min  
-1.0  
-1.0  
-65  
Max  
Unit  
V
Input voltage  
+5.5  
+4.0  
+150  
260 × 10  
0.6  
Power supply voltage  
Storage temperature (plastic)  
Soldering temperature × time  
Power dissipation  
VCC  
V
TSTG  
°C  
oC × sec  
TSOLDER  
PD  
W
Short circuit output current  
Iout  
50  
mA  
Truth table  
Addresses  
Operation  
Standby  
RAS  
LCAS  
H to X  
L
UCAS  
H to X  
L
WE  
X
OE  
X
tR  
tC  
X
DQ0 to DQ15  
High-Z  
Notes  
H
L
X
Word read  
H
L
ROW  
COL  
Data out  
Lower byte  
read  
Lower byte,  
Upper byte, Data out  
L
L
L
L
L
L
H
L
H
L
H
H
L
L
L
ROW  
ROW  
ROW  
ROW  
ROW  
COL  
COL  
COL  
COL  
COL  
Upper byte  
read  
Lower byte,  
Data out, Upper byte  
Word  
(early) write  
L
X
X
X
Data in  
Lower byte  
(early) write  
Lower byte, Data in,  
Upper byte, High-Z  
L
H
L
L
Upper byte  
(early) write  
Lower byte, High-Z,  
Upper byte, Data in  
H
L
Read write  
EDO read  
L
L
L
L
L
L
L
L
L
L
H to L L to H ROW  
COL  
COL  
COL  
n/a  
Data out, Data in  
Data out  
1,2  
2
1st cycle  
2nd cycle  
Any cycle  
1st cycle  
2nd cycle  
1st cycle  
2nd cycle  
H to L  
H to L  
L to H  
H to L  
H to L  
H to L  
H to L  
H to L  
H to L  
L to H  
H to L  
H to L  
H
H
H
L
L
L
ROW  
n/a  
Data out  
2
L
n/a  
Data out  
2
X
X
ROW  
n/a  
COL  
COL  
COL  
COL  
Data in  
1
EDO write  
L
Data in  
1
H to L H to L L to H ROW  
Data out, Data in  
Data out, Data in  
1,2  
1,2  
EDO  
read write  
H to L H to L L to H  
n/a  
RAS only  
refresh  
L
H
H
X
X
ROW  
n/a  
High Z  
CBR refresh  
Self refresh  
H to L  
H to L  
L
L
L
L
H
H
X
X
X
X
X
X
High Z  
High Z  
3
3
4/11/01  
Alliance Semiconductor  
3