2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
2.0
A
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
IDM
8.0
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
140
mJ
mJ
V/ns
W
Avalanche Energy
EAR
4.5
Peak Diode Recovery dv/dt (Note 4)
TO-220/ TO-262
dv/dt
4.5
54
PD
TO-220F/TO-220F1
Power Dissipation
23
W
(TC = 25°С)
TO-251/TO-251L/TO-252
44
W
TO-126
Junction Temperature
Operating Temperature
Storage Temperature
40
W
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
62.5
62.5
100
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
TO-220/ TO-262
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-126
Junction to Ambient
Junction to Case
θJA
89
TO-220/ TO-262
TO-220F/TO-220F1
TO-251/TO-251L/TO-252
TO-126
2.32
5.5
θJc
2.87
3.12
深圳市众达安科技有限公司
Page 2
：（0755）27858667 27858661
真：（0755）27858707
www.junyi-ic.com
ETC [ ETC ]
