BSP 297
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = 0.65 A, V = 10 V
parameter: V = V , I = 1 mA
GS DS D
D
GS
5.0
4.6
V
Ω
4.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
RDS (on)
VGS(th)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
98%
typ
98%
typ
2%
0.5
0.0
0.4
0.0
-60
-20
20
60
100
˚C
Tj
160
-60
-20
20
60
100
˚C
Tj
160
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
ƒ
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 3
10 1
pF
A
Ciss
C
IF
10 2
10 1
10 0
10 0
10 -1
10 -2
Coss
Crss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
0
5
10
15
20
25
30
V
VDS
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
Data Sheet
7
05.99
ETC [ ETC ]
