BSP 297
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150
-55 ... + 150
˚C
j
T
stg
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤
≤
70
10
K/W
thJA
R
thJS
E
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 ˚C
V
V
I
V
(BR)DSS
GS(th)
V
200
0.8
-
-
GS
D
j
Gate threshold voltage
I = 1 mA
V
=V
GS DS, D
1.4
2
Zero gate voltage drain current
DSS
V
V
V
= 200 V, V = 0 V, T = 25 ˚C
-
0.1
1
µA
DS
DS
DS
GS
j
= 200 V, V = 0 V, T = 125 ˚C
-
-
8
-
50
100
GS
j
= 130 V, V = 0 V, T = 25 ˚C
nA
nA
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
GSS
V
-
10
100
GS
DS
Ω
Drain-Source on-state resistance
R
DS(on)
V
V
= 10 V, I = 0.65 A
-
-
1.6
2
2
GS
GS
D
= 4.5 V, I = 0.65 A
3.3
D
Data Sheet
2
05.99
ETC [ ETC ]
