ZXTCM322
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
I =100A
Collector-Base Breakdown
Voltage
V
V
V
100
190
V
(BR)CBO
(BR)CEO
C
Collector-Emitter Breakdown
Voltage
50
65
V
V
I =10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
7.5
8.2
I =100A
E
(BR)EBO
CBO
I
I
I
25
25
25
nA
nA
nA
V
V
V
=80V
CB
Emitter Cut-Off Current
=6V
EBO
EB
Collector Emitter Cut-Off Current
=40V
CES
CES
Collector-Emitter Saturation
Voltage
V
10
20
mV
mV
mV
mV
mV
mV
I =0.1A, I =10mA*
C B
CE(sat)
70
100
200
220
300
320
I =1A, I =50mA*
C B
145
115
225
270
I =1A, I =10mA*
C B
I =2A, I =50mA*
C
C
B
B
B
I =3A, I =100mA*
I =4A, I =200mA*
C
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
1.00
0.94
1.05
1.00
V
V
I =4A, I =200mA*
C B
BE(sat)
BE(on)
FE
I =4A, V =2V*
CE
C
Static Forward Current Transfer
Ratio
200
300
200
100
400
450
400
225
40
I =10mA, V =2V*
CE
C
I =0.2A, V =2V*
C
C
CE
CE
CE
I =1A, V =2V*
I =2A, V =2V*
C
I =6A, V =2V*
CE
C
Transition Frequency
f
100
165
MHz
I =50mA, V =10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
12
20
pF
ns
ns
V
=10V, f=1MHz
obo
(on)
(off)
CB
t
t
170
750
V
=10V, I =1A
CC
C
I
=I =10mA
B1 B2
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
4
ZETEX [ ZETEX SEMICONDUCTORS ]
