ZXTCM322
TYPICAL CHARACTERISTICS
3.5
3.0
V
CE(SAT)
10
1
T
amb=25°C
Limited
2.5
2oz Cu
Note: e
DC
2.0
1s
100ms
1.5
10ms
0.1
1oz Cu
1.0
1ms
Note: a
100us
0.5
Single Pulse, Tamb=25°C
1
0.01
0.0
0.1
10
100
0
25
50
75
100 125 150
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Derating Curve
Safe Operating Area
225
80
60
40
20
0
200
175
150
125
100
75
D=0.5
D=0.2
1oz copper
Single Pulse
D=0.05
D=0.1
50
25
2oz copper
10
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
100
Pulse Width (s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
T
amb=25°C
jmax=150°C
Continuous
2oz copper
1oz copper
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZETEX [ ZETEX SEMICONDUCTORS ]
