ZXT10N15DE6
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).
PARAMETER
S YMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS .
Co lle cto r-Ba s e Bre a kd o w n
Vo lta g e
V
V
V
15
15
5
70
V
I =100A
(BR)CBO
(BR)CEO
C
Co lle cto r-Em itte r Bre a kd o w n
Vo lta g e
18
V
I =10m A*
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r Cu t-Off Cu rre n t
8.2
V
I =100A
E
(BR)EBO
CBO
I
I
I
100
100
100
n A
n A
n A
V
V
V
=10V
=4V
CB
Em itte r Cu t-Off Cu rre n t
EBO
EB
Co lle cto r Em itte r Cu t-Off Cu rre n t
=10V
CES
CES
Co lle cto r-Em itte r S a tu ra tio n
Vo lta g e
V
8
70
165
230
14
100
200
260
m V
m V
m V
m V
I =0.1A, I =10m A*
C B
CE(s a t)
I =1A, I =10m A*
C
B
I =3A, I =50m A*
C B
I =4A, I =50m A*
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e
Ba s e -Em itte r Tu rn -On Vo lta g e
V
V
0.94 1.0
0.87 0.95
415
450
320
240
80
V
V
I =4A, I =50m A*
C B
BE(s a t)
BE(o n )
FE
I =4A, V =2V*
C
CE
S ta tic Fo rw a rd Cu rre n t Tra n s fe r
Ra tio
h
200
300
200
150
I =10m A, V =2V*
C CE
I =0.2A, V =2V*
C CE
I =3A, V =2V*
C
CE
I =5A, V =2V*
C
CE
I =12A, V =2V*
C
CE
Tra n s itio n Fre q u e n cy
f
80
120
MHz
I =50m A, V =10V
T
C
CE
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
C
30
40
p F
n s
n s
V
=10V, f=1MHz
o b o
(o n )
(o ff)
CB
t
t
120
160
V
=10V, I =3A
C
=I =50m A
CC
I
B1 B2
Tu rn -Off Tim e
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - SEPTEMBER 2000
4
ZETEX [ ZETEX SEMICONDUCTORS ]
