ZXT10N15DE6
SuperSOT™
15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=15V; RSAT = 50m ; IC= 4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
m atrix structure com bined with advanced assem bly techniques to give
extrem ely low on state losses. This m akes it ideal for high efficiency, low
voltage switching applications.
S OT2 3 -6
FEATURES
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Low Equivalent On Resistance
Extrem ely Low Saturation Voltage
hFE characterised up to 12A
IC=4A Continuous Collector Current
SOT23-6 package
APPLICATIONS
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DC - DC Converters
Power Managem ent Functions
Power switches
Motor control
C
C
B
C
C
E
ORDERING INFORMATION
DEVICE
REEL S IZE
TAPE WIDTH
(m m )
QUANTITY
PER REEL
(in ch e s )
ZXT10N15DE6TA
ZXT10N15DE6TC
7
8m m e m b o s s e d
8m m e m b o s s e d
3000 u n its
10000 u n its
Top View
13
DEVICE MARKING
617
ISSUE 1 - SEPTEMBER 2000
1