ZVN4525E6
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS.
T
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS 250
285
35
1
V
ID=1mA, VGS=0V
IDSS
IGSS
VGS(th)
RDS(on)
500
100
1.8
nA VDS=250V, VGS=0V
nA
V
VGS=±40V, VDS=0V
ID=1mA, VDS= VGS
VGS=10V, ID=500mA
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
0.8
0.3
1.4
5.6
5.9
6.4
8.5
9.0
9.5
Ω
Ω
Ω
V
V
GS=4.5V, ID=360mA
GS=2.4V, ID=20mA
Forward Transconductance (3)
DYNAMIC (3)
gfs
0.475
S
VDS=10V,ID=0.3A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
72
11
3.6
pF
pF
pF
V
DS=25 V, VGS=0V,
f=1MHz
td(on)
tr
td(off)
tf
1.25
1.70
11.40
3.5
ns
ns
ns
ns
nC
nC
nC
V
DD =30V, ID=360mA
RG=50Ω, Vqs=10V
(refer to test circuit)
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
2.6
3.65
0.28
0.70
V
DS=25V,VGS=10V,
Qgs
Qgd
0.2
ID=360mA(refer to
test circuit)
0.5
VSD
0.97
V
Tj=25°C, IS=360mA,
V
GS=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
trr
186
34
260
48
ns Tj=25°C, IF=360mA,
di/dt= 100A/µs
nC
Qrr
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001
4
ZETEX [ ZETEX SEMICONDUCTORS ]
