ZVN4525E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
LIMIT
250
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
VGS
±40
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a)
ID
ID
230
183
mA
mA
Pulsed Drain Current (c)
IDM
IS
1.44
1.1
A
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
ISM
PD
1.44
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RθJA
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
65
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2
ZETEX [ ZETEX SEMICONDUCTORS ]
