ZTX602
ZTX603
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
ZTX602
ZTX603
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
hFE
2K
5K
2K
0.5K
2K
5K
100K 2K
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
100K
0.5K
IC=2A, VCE=5V*
Transition Frequency fT
150
150
MHz IC=100mA, VCE=10V
f=20MHz
Input Capacitance
Cibo
90 Typical
15 Typical
0.5 Typical
1.1 Typical
pF
pF
µs
µs
VEB=500mV, f=1MHz
VCB=10V, f=1MHz
Output Capacitance Cobo
Switching Times
ton
toff
IC=500mA, VCE=10V
IB1=IB2=0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
R
= 50KΩ
R = 10KΩ
R
= 200KΩ
1.0
0.8
0.6
0.4
0.2
0
R
R
= 1MΩ
= ∞
DC Conditions
ZTX603
ZTX602
1
10
100
200
VCE - Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Power (max ) − Power (act)
T
=
)
+25°C
(
0.0057
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given VCE and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
3-210
ZETEX [ ZETEX SEMICONDUCTORS ]
