NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
ZTX602
ZTX603
FEATURES
*
*
*
*
80 Volt VCEO
1 Amp continuous current
Gain of 2K at IC=1 Amp
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX602
80
ZTX603
100
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
A
A
60
80
10
4
Peak Pulse Current
Continuous Collector Current
IC
1
Power Dissipation at Tamb = 25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
ZTX602
ZTX603
UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
100
80
V
V
V
IC=100µA
IC=10mA*
IE=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
60
10
Emitter-Base
Breakdown Voltage
10
Collector Cut-Off
Current
0.01
10
V
CB=60V
VCB=80V
CB=60V,T
CB=80V,T
µA
µA
µA
µA
0.01
V
=100°C
=100°C
10
V
Emitter Cut-Off
Current
IEBO
0.1
10
0.1
VEB=8V
µA
Colllector-Emitter
Cut-Off Current
ICES
VCES=60V
VCES=80V
µA
µA
10
Collector-Emitter
Saturation Voltage
VCE(sat)
1.0
1.0
1.0
1.0
V
V
IC=400mA,
IB=0.4mA*
IC=1A, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
1.8
1.7
1.8
1.7
V
V
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
IC=1A, VCE=5V*
3-209
ZETEX [ ZETEX SEMICONDUCTORS ]
