BS250F
TYPICAL CHARACTERISTICS
120
100
80
Note:V
DS=
-10V
60
40
20
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
120
100
80
Note:V
DS=
-10V
60
40
20
0
0 -1
-2
-3
-4
-5
-6
-7
-8
-9
-10
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
60
50
40
30
20
10
C
rss
0
0
-10
-20
-30
-40
-50
-60
-70
C
iss
Note:V
GS=
0V
f=1MHz
2
1
0
-2
-4
-6
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
V
DS
=
-20V -40V -60V
Note:I
D=-
0.2A
C-Capacitance (pF)
C
oss
V
DS
-Drain Source Voltage (Volts)
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 57
ZETEX [ ZETEX SEMICONDUCTORS ]
