BS250F
TYPICAL CHARACTERISTICS
-1.2
-1.0
V
GS=
-20V
-16V
-14V
-0.8
-0.6
-0.4
-7V
-0.2
0
0
-10
-20
-30
-40
-50
-6V
-5V
-4V
-12V
-10V
-9V
-8V
-1.0
V
GS
=
-16V
-14V
-0.8
-12V
-0.6
-10V
-9V
-8V
-7V
-0.2
-6V
-5V
-4.5V
0
-2
-4
-6
-8
-10
I
D
- Drain Current (Amps)
I
D
- Drain Current (Amps)
-0.4
0
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
I
D(On)-
On-State Drain Current (Amps)
V
DS-
Drain Source
Voltage (Volts)
-10
-8
I
D=
-6
-
400mA
-1.0
-0.8
V
DS=-
10V
-0.6
-4
-200mA
-0.4
-2
-0.2
0
0
-2
-4
-6
-8
-100mA
-10
0
0
-2
-4
-6
-8
-10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance
(Ω)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
100
V
GS
=-5V
-6V
-7V
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
Re
ce
ur
So
eR
nc
ta
sis
V
GS=
-10V
I
D=
0.37A
n)
(o
DS
-10V
10
-15V
-20V
-
ain
Dr
Gate Thresh
old
V
GS=
V
DS
I
D=
-1mA
Voltage V
GS
(TH)
1
-10
-100
-1000
20 40 60 80 100 120 140 160 180
I
D-
Drain Current (mA)
Junction Temperature (°C)
On-resistance vs Drain Current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3 - 56
ZETEX [ ZETEX SEMICONDUCTORS ]
