BAT750
Absolute maximum ratings
Parameter
Collector reverse voltage
RMS reverse voltage
Forward current (continuous)
Forward voltage @ I
F
= 750mA
Average peak forward current; DC = 50%
Non repetitive forward current
Power dissipation @ T
amb
= 25°C
Typical thermal resistance, junction to ambient air
Storage temperature range
Junction temperature
t 100 S
t 8.3ms
Symbol
V
R
V
R(RMS)
I
F
V
F
I
FAV
I
FSM
P
tot
R
JA
T
stg
T
j
Limit
40
28
750
490
1500
12
5.5
350
286
-55 to +150
125
Unit
V
V
mA
mV
mA
A
mW
°C/W
°C
°C
Electrical characteristics (@ T
amb
= 25°C unless otherwise stated)
Parameter
Reverse breakdown
voltage
Forward voltage
Symbol
V
(BR)R
V
F
Min.
40
Typ.
60
225
235
290
340
390
440
530
Reverse current
Diode capacitance
Reverse recovery time
I
R
C
D
t
rr
50
25
5
280
310
350
420
490
540
650
100
-
-
Max.
Unit
V
mV
mV
mV
mV
mV
mV
mV
A
pF
ns
Conditions
I
R
= 300 A
I
F
= 50mA
(*)
I
F
= 100mA
I
F
= 250mA
I
F
= 500mA
I
F
= 750mA
I
F
= 1000mA
I
F
= 1500mA
V
R
= 30V
V
R
= 25V, f = 1.0MHz
I
F
= I
R
= 100mA,
I
rr
= 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 duty cycle
2%.
© Zetex Semiconductors plc 2008
ZETEX [ ZETEX SEMICONDUCTORS ]
