FCX619
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS .
Co lle cto r-Ba s e
Bre a kd o w n Vo lta g e
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
50
50
5
190
V
IC=100µA
Co lle cto r-Em itte r
Bre a kd o w n Vo lta g e
65
V
V
IC=10m A*
IE=100µA
VCB=40V
Em itte r-Ba s e
Bre a kd o w n Vo lta g e
8.3
Co lle cto r Cu t-Off
Cu rre n t
100
n A
Em itte r Cu t-Off Cu rre n t IEBO
100
100
n A
n A
VEB=4V
Co lle cto r Em itte r
Cu t-Off Cu rre n t
ICES
VCES =40V
Co lle cto r-Em itte r
S a tu ra tio n Vo lta g e
VCE(S AT)
13
25
m V
m V
m V
m V
IC=0.1A, IB=10m A*
IC=1A, IB=10m A*
IC=2A, IB=50m A*
IC=2.75A,IB=100m A*
150
190
240
220
260
320
Ba s e -Em itte r
S a tu ra tio n Vo lta g e
VBE(S AT)
VBE(ON)
0.97
1.1
V
IC=2.75A,
IB=100m A*
Ba s e -Em itte r Tu rn -On
Vo lta g e
0.89
1.0
V
IC=2.75A, VCE=2V*
S ta tic Fo rw a rd Cu rre n t h FE
Tra n s fe r Ra tio
200
300
200
100
400
450
400
200
30
IC=10m A, VCE=2V*
IC=200m A, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Tra n s itio n
Fre q u e n cy
fT
100
165
MHz
IC=50m A, VCE=10V
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
COBO
t(ON)
t(OFF)
12
20
p F
n s
n s
VCB=10V, f=1MHz
VCC=10V, IC=1A
170
750
IB1=-IB2=10m A
Tu rn -Off Tim e
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice param eter data is available upon request for this device
ZETEX [ ZETEX SEMICONDUCTORS ]
