SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 6 - JANUARY 2003
FEATURES
FCX619
C
*
*
*
*
*
*
2W POWER DISSIPATION
6A PEAK PULSE CURRENT
EXCELLENT h
FE
CHARACTERISTICS UP TO 6 Amps
EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ.
EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
R
CE(sat)
87mΩ at 2.75A
Ω
FCX720
619
E
C
B
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current †
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
†
‡
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
50
50
5
6
3.0
500
1.5†
2‡
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
recommended P
tot
calculated using FR4 measuring 25x25x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
ZETEX [ ZETEX SEMICONDUCTORS ]
