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MAS5104FC 参数 Datasheet PDF下载

MAS5104FC图片预览
型号: MAS5104FC
PDF下载: 下载PDF文件 查看货源
内容描述: 辐射HARD 4096× 1位的静态RAM [RADIATION HARD 4096 x 1 BIT STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 262 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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MA5104
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Total Dose (Function to specification)*
Transient Upset (Stored data loss)
Transient Upset (Survivability)
Neutron Hardness (Function to specification)
Single Event Upset**
Latch Up
1x10
5
Rad(Si)
5x10
10
Rad(Si)/sec
>1x10
12
Rad(Si)/sec
>1x10
15
n/cm
2
3.4x10
-9
Errors/bit day
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 16: Radiation Hardness Parameters
SINGLE EVENT UPSET CHARACTERISTICS
UPSET BIT
CROSS-SECTION
(cm
2
/bit)
Ion LET (MeV.cm
2
/mg)
Figure 17: Typical Per-Bit Upset Cross-Section vs Ion LET
10