欢迎访问ic37.com |
会员登录 免费注册
发布采购

MAS5104FC 参数 Datasheet PDF下载

MAS5104FC图片预览
型号: MAS5104FC
PDF下载: 下载PDF文件 查看货源
内容描述: 辐射HARD 4096× 1位的静态RAM [RADIATION HARD 4096 x 1 BIT STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 262 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
 浏览型号MAS5104FC的Datasheet PDF文件第1页浏览型号MAS5104FC的Datasheet PDF文件第2页浏览型号MAS5104FC的Datasheet PDF文件第3页浏览型号MAS5104FC的Datasheet PDF文件第5页浏览型号MAS5104FC的Datasheet PDF文件第6页浏览型号MAS5104FC的Datasheet PDF文件第7页浏览型号MAS5104FC的Datasheet PDF文件第8页浏览型号MAS5104FC的Datasheet PDF文件第9页  
MA5104
AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
SS
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Transition is measured at
±500mV
from steady state.
4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V
±10%.
GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAVR
T
AVQV
T
ELQV
T
ELQX
(4)
T
ELQZ
(4)
T
AXQX
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output Valid
Chip Select to Output Active
Chip Select to Output Tri State
Output Hold from Address Change
Min
135
-
-
10
10
10
Max
-
135
135
-
50
-
Units
ns
ns
ns
ns
ns
ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol
T
AVAVW
T
AVWL
T
WLWH
T
WHAV
T
DVWH
T
NHDX
T
WLQZ
(4)
T
ELWL
T
ELWH
T
AVWH
T
WHQX
(4)
Parameter
Write Cycle Tlme
Address Set Up Time
Write Pulse Width
Write Recovery Time
Data Set Up Time
Data Hold Time
Write Enable to Output Tri State
Chip Selection to Write Low
Chip Selection to End of Write
Address Valid to End of Write
Output Active from End to Write
Min
135
10
50
5
35
5
10
25
85
80
5
Max
-
-
-
-
-
-
50
-
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
O
= 0V
Min.
-
-
Typ.
6
8
Max.
10
12
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
3