MA17503
9.0 RADIATION TOLERANCE
Total Dose (Function to specification)*
Transient Upset (Stored data loss)
Transient Upset (Survivability)
Neutron Hardness (Function to specification)
Single Event Upset**
3x105 Rad(Si)
1x1011 Rad(Si)/sec
>1x1012 Rad(Si)/sec
>1x1015 n/cm2
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample devices
from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
<1x10-10 Errors/bit day
Not possible
Latch Up
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
GEC Plessey Semiconductors can provide radiation testing
compliant with Mil-Std-883 method 1019 Ionizing Radiation
(total dose) test.
Table 10: Radiation Hardness Parameters
10.0 ORDERING INFORMATION
Unique Circuit Designator
MAx17503xxxxx
Radiation Tolerance
S
R
Q
Radiation Hard Processing
100 kRads (Si) Guaranteed
300 kRads (Si) Guaranteed
QA/QCI Process
(See Section 9 Part 4)
Test Process
(See Section 9 Part 3)
Package Type
C
F
L
Ceramic DIL (Solder Seal)
Flatpack (Solder Seal)
Leadless Chip Carrier
Assembly Process
(See Section 9 Part 2)
Reliability Level
L
Rel 0
C
D
E
B
S
Rel 1
Rel 2
Rel 3/4/5/STACK
Class B
Class S
For details of reliability, QA/QC, test and assembly
options, see ‘Manufacturing Capability and Quality
Assurance Standards’ Section 9.
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